sot-23 sot-23 plastic-encapsulate diodes cesd 5 v 0 ap esd protection diode description the cesd 5 v 0 ap is designed to protec t voltage sensitive 1 components from esd. excellent cl amping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to esd. because of its small size, it is suited for use in cellular phones, mp3 players, digita l cameras and many other portable applications where board s pace is at a premium. features z stand ? off voltage: 5.0 v z low leakage z response time is typically < 1 ns z esd rating of class 3 (> 16 kv) p er human body model z iec61000 ? 4 ? 2 level 4 esd protection z these are pb ? free devices maximum ratings @t a =25 parameter symbol limit unit iec61000 ? 4 ? 2(esd) air contact 15 8.0 kv esd voltage per human body model 16 kv total power dissipation on fr-5 board (note 1) p d 225 mw thermal r esistance j unction ? to ? a mbient r ja 556 / w lead s older t emperature ? m aximum (10 s econd d uration) t l 260 junction and s torage temperature range t j, t stg -55 ~ +150 stresses exceeding m aximum r atings may damage the device. maximum r atings are stress ratings only. functional operation above the r eco mmended. operating c onditions is no t implied. extended exposure to stresses above the r ecommended o perating c ond itions may affect device reliability. note 1. fr ? 5 = 1.0 x 0.75 x 0.62 in. 1 2 3 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,mar,2013
electrical characteristics (t a = 25c unless otherwise noted) unidirectional (circuit tied to pins 1 and 3 or 2 and 3) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current i f forward current v f forward voltage @ i f p pk peak power dissipation c max. capacitance @v r =0 and f =1mhz electrical characteristics (t a = 25c unless otherwise noted, v f = 0.9 v max. @ i f = 10ma for all types) device* device marking v rwm (v) i r ( a) @ v rwm v br (v) @ i t (note 2) i t v c @i pp =1 a max i pp + p pk + (w) c (pf) pin 1 to 3 max max min max ma v a max typ CESD5V0AP 5m 5 10 6.2 7.3 1.0 9.8 12 300 110 *other voltages available upon request. +surge current waveform per figure 3 note 2. v br is measured with a pulse test current i t at an ambient temperature of 25c. 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,mar,2013
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